Graphene p-n junction arrays as quantum-Hall resistance standards
نویسندگان
چکیده
منابع مشابه
Quantum Hall effect in a gate-controlled p-n junction of graphene.
The unique band structure of graphene allows reconfigurable electric-field control of carrier type and density, making graphene an ideal candidate for bipolar nanoelectronics. We report the realization of a single-layer graphene p-n junction in which carrier type and density in two adjacent regions are locally controlled by electrostatic gating. Transport measurements in the quantum Hall regime...
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Recent quantum Hall experiments conducted on disordered graphene p-n junction provide evidence that the junction resistance could be described by a simple Ohmic sum of the n and p mediums’ resistances. However in the ballistic limit, theory predicts the existence of chirality-dependent quantum Hall plateaus in a p-n junction. We show that two distinctively separate processes are required for th...
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Graphene is a new material whose unique electronic structure endows it with many unusual properties [1]. A monolayer graphene is a gapless two-dimensional (2D) semiconductor with a massless electron-hole symmetric spectrum near the corners of the Brillouin zone, ǫ(k) = ±~v|k|, where v ≈ 10 cm/s. The concentration of these “Dirac” quasiparticles can be accurately controlled by the electric field...
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We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local ...
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Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10(-9) in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene devi...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3608157